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| 2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applications Low drain-source ON resistance High forward transfer admittance : RDS (ON) = 2.7 m (typ.) : |Yfs| = 120 S (typ.) Unit: mm Low leakage current : IDSS = 10 A (max) (VDS = 40 V) Enhancement mode : Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 40 40 20 75 300 125 542 75 12.5 150 -55~150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W 1 4 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 25 V, Tch = 25C (initial), L = 100 H, IAR = 75 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2006-09-27 2SK3843 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf toff Qg Qgs Qgd VDD 32 V, VGS = 10 V, ID = 75 A ton 4.7 10 V 0V ID = 38 A RL = 0.53 VOUT -- 40 -- ns -- 65 -- VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 38 A VGS = 10 V, ID = 38 A VDS = 10 V, ID = 38 A Min -- -- 40 15 1.5 -- -- 60 -- -- -- -- Typ. -- -- -- -- -- 4.3 2.7 120 11200 800 1350 12 Max 10 10 -- -- 3.0 8.0 3.5 -- -- -- -- -- pF Unit A A V V m S VDD 20 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") Charge Duty < 1%, tw = 10 s = -- -- -- -- 260 210 150 60 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR1 = 75 A, VGS = 0 V IDR = 75 A, VGS = 0 V dIDR/dt = 30 A/s Min -- -- -- -- -- Typ. -- -- -- 100 120 Max 75 300 -1.5 -- -- Unit A A V ns nC Marking Part No. (or abbreviation code) K3843 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-09-27 2SK3843 ID - VDS 100 Common source Tc = 25C Pulse test 10 8 6 5 4.75 4.5 160 4.25 4 60 3.75 40 3.5 20 VGS = 3.25 V 0 0 200 10 8 6 5 4.75 ID - VDS Common source Tc = 25C Pulse test 80 4.5 (A) ID ID (A) 120 4.25 Drain current Drain current 80 4 40 3.75 3.5 VGS = 3.25 V 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 200 VDS - VGS 1.0 VDS (V) Common source VDS = 10 V Pulse test 160 0.8 Common source Tc = 25C Pulse test ID (A) 120 80 100 Tc = -55C 25 Drain-source voltage 0.6 Drain current 0.4 ID = 75 A 38 19 0 0 4 8 12 16 20 40 0.2 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 1000 RDS (ON) - ID 100 Common source Tc = 25C Pulse test Yfs Forward transfer admittance 100 Tc = -55C 25 100 Drain-source ON resistance RDS (ON) (m) Common source VDS = 10 V Pulse test 10 VGS = 4.5 V 10 10 1 1 10 100 1000 1 1 10 100 1000 Drain current ID (A) Drain current ID (A) 3 2006-09-27 2SK3843 RDS (ON) - Tc 10 IDR - VDS 1000 Common source Tc = 25C Pulse test 10 5 3 1 VGS = 0, -1 V Drain-source ON resistance RDS (ON) (m) 8 IDR 6 VGS = 4.5 V 4 VGS = 10 V 2 ID = 75, 38, 19 A 19 (A) Drain reverse current 38 100 10 1 Common source Pulse test 0 -80 -40 0 40 80 120 160 0 -0.4 -0.8 -1.2 -1.6 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 100000 5 Vth - Tc Vth (V) Common source VDS = 10 V ID = 1 mA Pulse test (pF) 4 Gate threshold voltage C 10000 Ciss 3 Capacitance 2 1000 Common source VGS = 0 V f = 1 MHz Tc = 25C 100 0.1 1 10 Coss Crss 1 100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 150 40 Dynamic input/output characteristics VDS (V) Common source ID = 75 A Tc = 25C Pulse test 16 (W) 30 16 20 12 VDD = 32 V Drain power dissipation Drain-source voltage 90 8 60 10 30 VGS 4 0 0 40 80 120 160 0 0 100 200 300 400 0 500 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-09-27 Gate-source voltage VGS PD 120 VDS 8 (V) 2SK3843 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 0.01 10 100 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 1000 1000 EAS - Tch ID max (Pulse) * 1 ms * 100 ID max (Continuous) 10 ms * EAS (mJ) Avalanche energy 800 600 ID (A) 400 Drain current 10 DC operation Tc = 25C 200 0 25 1 * Single nonrepetitive pulse Tc = 25C 50 75 100 125 150 Channel temperature (initial) BVDSS IAR VDD Test circuit RG = 25 VDD = 25 V, L = 100 H Tch (C) Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 100 15 V 0V Drain-source voltage VDS (V) VDS Wave form AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2006-09-27 2SK3843 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-09-27 |
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